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  1. Abstract

    Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at$$\overline{{{\Gamma }}}$$Γ¯in topological insulators Bi2Se(Te)3and Dirac cones atKand$$K^{\prime}$$Kpoints in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene.

     
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  2. null (Ed.)
  3. Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the Z 2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods. 
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